Wei Wang
37Patents
13h-index
40Co-inventors
81Inventor score
Filing activity: Mar 2, 2000 → Aug 5, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6277249A | Integrated process for copper via filling using a magnetron and target producing highly energetic ions | Electricity | 195 | Expired |
| US6274008A | Integrated process for copper via filling | Electricity | 155 | Expired |
| US6413382B1 | Pulsed sputtering with a small rotating magnetron | Electricity | 98 | Expired |
| US6352629B1 | Coaxial electromagnet in a magnetron sputtering reactor | Electricity | 67 | Expired |
| US6451177B1 | Vault shaped target and magnetron operable in two sputtering modes | Electricity | 61 | Expired |
| US6436251B2 | Vault-shaped target and magnetron having both distributed and localized magnets | Electricity | 51 | Expired |
| US6358376B1 | Biased shield in a magnetron sputter reactor | Electricity | 48 | Expired |
| US6730196B2 | Auxiliary electromagnets in a magnetron sputter reactor | Electricity | 27 | Expired |
| US6485618B2 | Integrated copper fill process | Electricity | 25 | Expired |
| US6787006B2 | Operating a magnetron sputter reactor in two modes | Electricity | 25 | Expired |
| US6991709B2 | Multi-step magnetron sputtering process | Electricity | 24 | Expired |
| US8558299B2 | Semiconductor device with gate electrode stack including low resistivity tungsten and method of forming | Electricity | 22 | Active |
| US8895450B2 | Low resistivity tungsten PVD with enhanced ionization and RF power coupling | Electricity | 15 | Active |
| US9870613B2 | Detection of tooth condition using reflectance images with red and green fluorescence | Electricity | 13 | Active |
| US6709553B2 | Multiple-step sputter deposition | Electricity | 11 | Expired |
| US6758949B2 | Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities | Electricity | 9 | Expired |
| US6837975B2 | Asymmetric rotating sidewall magnet ring for magnetron sputtering | Electricity | 6 | Expired |
| US6743342B2 | Sputtering target with a partially enclosed vault | Electricity | 6 | Expired |
| US6884329B2 | Diffusion enhanced ion plating for copper fill | Electricity | 5 | Expired |
| US9746541B2 | Beacon array | Physics | 4 | Active |
| US6899796B2 | Partially filling copper seed layer | Electricity | 4 | Expired |
| US8119525B2 | Process for selective growth of films during ECP plating | Electricity | 4 | Active |
| US9759799B2 | Beacon array | Physics | 3 | Active |
| US7965082B2 | Magnetic resonance radio frequency system and operating method therefor | Physics | 3 | Active |
| US8216933B2 | Krypton sputtering of low resistivity tungsten | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.