Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
US6358756B1 · kind B1 · utility
90Cited by
20References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2001 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Feb 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
This invention pertains to a method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.