Clean method for recessed conductive barriers
US6358855B1 · kind B1 · utility
14Cited by
4References
15Claims
0Family size
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Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Jun 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for cleaning an oxidized diffusion barrier layer, in accordance with the present invention, includes providing a conductive diffusion barrier layer employed for preventing oxygen and metal diffusion therethrough and providing a wet chemical etchant including hydrofluoric acid. The diffusion barrier layer is etched with the wet chemical etchant to remove oxides from the diffusion barrier layer such that by employing the wet chemical etchant linear electrical behavior is achieved through the diffusion barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.