Bright field image reversal for contact hole patterning
US6358856B1 · kind B1 · utility
19Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Nov 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a small contact hole uses a bright field mask to form a small cylinder in a positive resist layer. A negative resist layer is formed around the small cylinder, and then etched or polished back to leave a top portion of the small cylinder exposed above the negative resist layer. The negative resist layer and the small cylinder (positive resist) are flood exposed to light, and then subject to a developer. What remains is a small contact hole located where the small cylinder was previously located.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.