Method for making a semiconductor device having a low-k dielectric layer
US6362091B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2000 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Mar 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved semiconductor device and method for making it. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.