Inventor · Fremont, CA, US

Quan Tran

25Patents
10h-index
36Co-inventors
75Inventor score

Filing activity: Mar 14, 2000 → Mar 16, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6903452B2 Packaging microelectromechanical structures Electricity 74 Expired
US6617682B1 Structure for reducing die corner and edge stresses in microelectronic packages Electricity 68 Expired
US6812814B2 Microelectromechanical (MEMS) switching apparatus Electricity 62 Expired
US6794223B2 Structure and process for reducing die corner and edge stresses in microelectronic packages Electricity 58 Expired
US6362091B1 Method for making a semiconductor device having a low-k dielectric layer Electricity 37 Expired
US6686820B1 Microelectromechanical (MEMS) switching apparatus Electricity 27 Expired
US6509622B1 Integrated circuit guard ring structures Electricity 27 Expired
US6673697B2 Packaging microelectromechanical structures Electricity 26 Expired
US8207453B2 Glass core substrate for integrated circuit devices and methods of making the same Emerging Cross-Sectional Technologies 20 Active
US7321275B2 Ultra-low voltage capable zipper switch Electricity 18 Expired
US7214995B2 Mechanism to prevent actuation charging in microelectromechanical actuators Electricity 8 Expired
US6914335B2 Semiconductor device having a low-K dielectric layer Electricity 8 Expired
US6967548B2 Microelectromechanical (MEMS) switching apparatus Electricity 7 Expired
US7510907B2 Through-wafer vias and surface metallization for coupling thereto Electricity 6 Active
US7602261B2 Micro-electromechanical system (MEMS) switch Electricity 4 Active
US9686861B2 Glass core substrate for integrated circuit devices and methods of making the same Emerging Cross-Sectional Technologies 3 Active
US8264941B2 Arrangement and method to perform scanning readout of ferroelectric bit charges Performing Operations; Transporting 2 Active
US7782649B2 Using controlled bias voltage for data retention enhancement in a ferroelectric media Physics 2 Active
US10070524B2 Method of making glass core substrate for integrated circuit devices Emerging Cross-Sectional Technologies 1 Active
US11894474B2 Silicon photonic integrated lens compatible with wafer processing Physics 1 Active
US11973539B2 Optical transceivers with multi-laser modules Electricity 0 Active
US6809617B2 Edge plated transmission line and switch integrally formed therewith Electricity 0 Expired
US12015446B2 Optical transceivers with multi-laser modules Electricity 0 Active
US11715928B2 Decoupling layer to reduce underfill stress in semiconductor devices Electricity 0 Active
US12332477B2 Methods and apparatus to reduce stress on lasers in optical transceivers Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.