Alloy barrier layers for semiconductors
US6362526B1 · kind B1 · utility
19Cited by
9References
4Claims
0Family size
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Key dates
| Filing date | Oct 8, 1998 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Oct 8, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor barrier layer and manufacturing method therefor for copper interconnects which is a tantalum-titanium, tantalum-titanium nitride, tantalum-titanium sandwich. The tantalum in the tantalum-titanium alloy bonds strongly with the semiconductor dielectric, the tantalum-titanium nitride acts as the barrier to prevent diffusion of copper, and the titanium bonds strongly with the copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.