Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
US6364958B1 · kind B1 · utility
36Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | May 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma assisted semiconductor substrate processing chamber having a plurality of electrically conductive bridges for preventing electrical arcing in the chamber. More particularly, the chamber has a plurality of electrically conductive bridges that connect a portion of a substrate support member with a portion of the chamber walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.