Laser thermal process for fabricating field-effect transistors
US6365476B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Oct 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02675
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A simplified and cost reduced process for fabricating a field-effect transistor semiconductor device (104) using laser radiation is disclosed. The process includes the step of forming removable first dielectric spacers (116R) on the sides (120a, 120b) of the gate (120). Dopants are implanted into the substrate (100) and the substrate is annealed to form an active deep source (108) and an active deep drain (110). The sidewall spacers are removed, and then a blanket pre-amorphization implant is performed to form source and drain amorphized regions (200a, 200b) that include respective extension regions (118a, 118b) that extend up to the gate. A layer of material (210 is deposited over the source and drain extensions, the layer being opaque to a select wavelength of laser radiation (220). The layer is then irradiated with laser radiation of the select wavelength so as to selectively melt the amorphized source and drain extensions, but not the underlying substrate. This causes dopants in the deep source to diffuse into the molten source extension, and dopants in the deep drain to diffuse into the molten drain extension. Upon recrystallization of the extensions, the layer of material is …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.