Ultratech Stepper, Inc.
60Patents
0Active
60Granted
40Portfolio score
Filing activity: Jan 10, 1992 → Nov 6, 2002
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6479821B1 | Thermally induced phase switch for laser thermal processing | Physics | 273 | Expired |
| US6635588B1 | Method for laser thermal processing using thermally induced reflectivity switch | Electricity | 265 | Expired |
| US6072251A | Magnetically positioned X-Y stage having six degrees of freedom | Emerging Cross-Sectional Technologies | 179 | Expired |
| US5691541A | Maskless, reticle-free, lithography | Physics | 171 | Expired |
| US6531681B1 | Apparatus having line source of radiant energy for exposing a substrate | Electricity | 148 | Expired |
| US5997963A | Microchamber | Electricity | 144 | Expired |
| US6747245B2 | Laser scanning apparatus and methods for thermal processing | Electricity | 106 | Expired |
| US5908307A | Fabrication method for reduced-dimension FET devices | Emerging Cross-Sectional Technologies | 94 | Expired |
| US6324330A | Folded light tunnel apparatus and method | Physics | 94 | Expired |
| US6365476B1 | Laser thermal process for fabricating field-effect transistors | Electricity | 93 | Expired |
| US5888888A | Method for forming a silicide region on a silicon body | Electricity | 85 | Expired |
| US6142641A | Four-mirror extreme ultraviolet (EUV) lithography projection system | Physics | 83 | Expired |
| US6366308B1 | Laser thermal processing apparatus and method | Electricity | 65 | Expired |
| US6274488A | Method of forming a silicide region in a Si substrate and a device having same | Electricity | 63 | Expired |
| US5410434A | Reflective projection system comprising four spherical mirrors | Physics | 60 | Expired |
| US5363196A | Apparatus for measuring a departure from flatness or straightness of a nominally-plane mirror for a precision X-Y movable-stage | Physics | 58 | Expired |
| US6680774B1 | Method and apparatus for mechanically masking a workpiece | Physics | 57 | Expired |
| US5956603A | Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6507405B1 | Fiber-optic interferometer employing low-coherence-length light for precisely measuring absolute distance and tilt | Physics | 50 | Expired |
| US6441514B1 | Magnetically positioned X-Y stage having six degrees of freedom | Electricity | 47 | Expired |
| US5886432A | Magnetically-positioned X-Y stage having six-degrees of freedom | Emerging Cross-Sectional Technologies | 46 | Expired |
| US6383956B2 | Method of forming thermally induced reflectivity switch for laser thermal processing | Electricity | 45 | Expired |
| US6380044B1 | High-speed semiconductor transistor and selective absorption process forming same | Electricity | 44 | Expired |
| US6303476A | Thermally induced reflectivity switch for laser thermal processing | Electricity | 40 | Expired |
| US5621813A | Pattern recognition alignment system | Physics | 39 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.