Injection seeded F2 lithography laser
US6370174B1 · kind B1 · utility
51Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1999 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Dec 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/2333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life releasable lithography lasers with special F2 line narrowing and tuning techniques applied to a seed beam operated in a first gain medium which beam is used to stimulate narrow band lasing in a second gain medium to produce a very narrow band laser beam useful for integrated circuit lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.