Method of forming silicon oxynitride films
US6372668B1 · kind B1 · utility
5Cited by
22References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2000 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Jan 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method of forming process layers comprised of silicon oxynitride. In one embodiment, the method comprises positioning a wafer in a process chamber, introducing silane and nitrous oxide into the chamber at a flow rate ratio ranging from approximately 2.6-3.8 silane to nitrous oxide, and generating a plasma in the chamber using a high frequency to low frequency power setting ratio ranging from approximately 1.2-1.8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.