Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
US6373054B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2001 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Jan 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An inspection method and apparatus which controls an acceleration voltage of an electron beam, irradiates the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, detects at least one of a secondary electron and a reflected electron emanated from the object by the irradiating, obtains an image of the object from the detected electron by using positional information of the stage, conducts inspection or measurement of the object using the image obtained, and outputs a result of the inspection or the measurement through a network system which is connected to a computer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.