Chemical-mechanical planarization of barriers or liners for copper metallurgy
US6375693B1 · kind B1 · utility
47Cited by
32References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 7, 1999 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | May 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A tantalum-based liner for copper metallurgy is selectively removed by chemical-mechanical planarization (CMP) in an acidic slurry of an oxidizer such as hydrogen peroxide, deionized water, a corrosion inhibitor such as BTA, and a surfactant such as DUPONOL SP, resulting in a high removal rate of the liner without appreciable removal of the exposed copper and with minimal dishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.