Systems and methods for variable mode plasma enhanced processing of semiconductor wafers
US6379576B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1998 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Nov 16, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Variable mode plasma system and method for processing a semiconductor wafer. The modulation of the plasma potential relative to the semiconductor wafer is varied for different process steps. A capacitive shield may be selectively grounded to vary the level of capacitive coupling and modulation of the plasma. Process pressures, gases and power level may also be modified for different process steps. Plasma properties may easily be tailored to specific layers and materials being processed on the surface of the wafer. Variable mode processes may be adapted for (i) removal of photoresist after high-dose ion implant, (ii) post metal etch polymer removal, (iii) via clean, and (iv) other plasma enhanced processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.