Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures
US6380106B1 · kind B1 · utility
34Cited by
7References
11Claims
0Family size
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Key dates
| Filing date | Nov 27, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Nov 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.