Feram cell with internal oxygen source and method of oxygen release

US6388285B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Charles T. Black · White Plains, US
• Cyril Cabral, Jr. · Ossining, US
• Alfred Grill · White Plains, US
• Deborah A. Neumayer · Danbury, US
• Wilbur D. Pricer · Burlington, US
• Katherine L. Saenger · Ossining, US
• Thomas M. Shaw · Peekskill, US

Key dates

• Filing date: Jun 4, 1999
• Grant date: May 14, 2002
• Expiry date: Jun 4, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682

Abstract

An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one of said electrodes, said oxygen source layer being a metal oxide which at least partially decomposes during deposition and/or subsequent processing is provided as well as a method of fabricating the same.