Patent · US Expired

Circuit configuration for generating a reference voltage for reading a ferroelectric memory

US6392918B2 · kind B2 · utility

6Cited by

5References

3Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Georg Braun · Hersbruck, DE
Heinz Honigschmid · Starnberg, DE
Kurt Hoffmann · Taufkirchen, DE
Oskar Kowarik · Grafing, DE
Thomas Rohr · Aschheim, DE

Key dates

Filing date	Mar 26, 2001
Grant date	May 21, 2002
Priority date	—
Expiry date	Mar 26, 2021

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/22
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A circuit for generating a reference voltage for the reading out from and the evaluation of read output signals which are read out with a constant plate voltage from storage cells of a ferroelectric memory via bit lines. In the circuit, a reference voltage device is formed of two reference cells that are subjected to the action of complementary signals. The reference cells can be simultaneously read out in order to generate the reference voltage in a selection and evaluation device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.