Very high aspect ratio gapfill using HDP
US6395150B1 · kind B1 · utility
349Cited by
11References
12Claims
0Family size
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Key dates
| Filing date | Apr 1, 1998 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Apr 1, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios of 6.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.