Resist composition and patterning process
US6399274B1 · kind B1 · utility
13Cited by
2References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 24, 2000 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Oct 24, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition contains as a base resin a polymer comprising recurring units of the formula (1-1) or (1-2) and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is a straight, branched or cyclic C1-15 alkyl group, R3 is hydrogen, methyl or CH2CO2R2, R4 is an acid labile group, i is an integer of 1 to 4, and k is equal to 0 or 1. The resist composition has significantly improved sensitivity, resolution and etching resistance and is very useful in precise microfabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.