Heat treatment method for semiconductor substrates
US6403450B1 · kind B1 · utility
43Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Feb 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method for treating, a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming, an oxide layer (6) at the semi-conducting layer (4) surface, carried out before the end of the annealing step, protecting the remainder of the semi-conducting layer (4).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.