Sensor for measuring a substrate temperature
US6406179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2001 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/80
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.