Plasma etching method
US6406640B1 · kind B1 · utility
6Cited by
35References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2000 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Apr 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of plasma etching and a method of operating a plasma etching apparatus in which a concentration of oxygen at flash striking is greater than a concentration during etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.