Method of improving epitaxially-filled trench by smoothing trench prior to filling
US6406982B2 · kind B2 · utility
15Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2001 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Jun 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that an opening width thereof is wider than that of the trench. After that, an inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished, whereby a semiconductor substrate for forming a semiconductor device is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.