Patent · US Expired

Method of forming lightly doped regions in a semiconductor device

US6410410B1 · kind B1 · utility

6Cited by

4References

11Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Thomas Feudel · Radebeul, DE
Manfred Horstmann · Dresden, DE
Karsten Wieczorek · Dresden, DE

Key dates

Filing date	May 10, 2001
Grant date	Jun 25, 2002
Priority date	—
Expiry date	May 10, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/516
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is disclosed in which a lightly doped region in a semiconductor layer is obtained by diffusing dopant atoms of a first and second type into the underlying semiconductor layer. Preferably, the method is applied to the formation of lightly doped source and drain regions in a field effect transistor so as to obtain a required gradual dopant concentration transition from the general region to the drain and source regions for avoiding the hot carrier effect. Advantageously, a diffusion of the dopant atoms is initiated during an oxidizing step in which the thickness of the gate insulation layer is increased at the edge portions thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.