Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6413583B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1999 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Jun 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micron devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40° C. onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.