Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6416822B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Mar 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76871
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to an enhanced non-sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.