Semiconductor processing method using high pressure liquid media treatment
US6417102B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2000 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jun 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with one aspect of the invention, a semiconductor processing method of treating a semiconductor wafer provides a wafer within a volume of liquid. The wafer has some electrically conductive material formed thereover. The volume of liquid within the chamber with the wafer therein is established at a pressure of greater than 1 atmosphere and at a temperature of at least 200° C. and below and within 10% of the melting point of the electrically conductive material. In accordance with another aspect, the volume of liquid within the chamber with the wafer therein is established at a pressure of greater than 1 atmosphere. After establishing the pressure of greater than 1 atmosphere, the pressure of the volume of liquid is lowered to a point effective to vaporize said liquid and the vapor is withdrawn from the chamber. In accordance with still another aspect, a semiconductor processing method of increasing planarity of an outer surface on a substrate comprises exposing the outer surface to a volume of liquid at a pressure of greater than about 200 atmospheres. The invention has particular utility to more completely filling contact openings with electrically conductive mate…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.