Mark Durcan
20Patents
9h-index
12Co-inventors
68Inventor score
Filing activity: May 8, 1997 → Oct 27, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6310366A | Retrograde well structure for a CMOS imager | Electricity | 221 | Expired |
| US6331488A | Planarization process for semiconductor substrates | Electricity | 112 | Expired |
| US6734482B1 | Trench buried bit line memory devices | Electricity | 72 | Expired |
| US6806137B2 | Trench buried bit line memory devices and methods thereof | Electricity | 51 | Expired |
| US7365384B2 | Trench buried bit line memory devices and methods thereof | Electricity | 22 | Active |
| US6445014B1 | Retrograde well structure for a CMOS imager | Electricity | 21 | Expired |
| US6787819B2 | Retrograde well structure for a CMOS imager | Electricity | 14 | Expired |
| US6483129B2 | Retrograde well structure for a CMOS imager | Electricity | 13 | Expired |
| US6100162A | Method of forming a circuitry isolation region within a semiconductive wafer | Electricity | 12 | Expired |
| US6340624B1 | Method of forming a circuitry isolation region within a semiconductive wafer | Electricity | 9 | Expired |
| US6686220B2 | Retrograde well structure for a CMOS imager | Electricity | 8 | Expired |
| US6274928A | Single deposition layer metal dynamic random access memory | Electricity | 6 | Expired |
| US6858460B2 | Retrograde well structure for a CMOS imager | Electricity | 6 | Expired |
| US6743724B2 | Planarization process for semiconductor substrates | Electricity | 4 | Expired |
| US7170124B2 | Trench buried bit line memory devices and methods thereof | Electricity | 1 | Expired |
| US6333264A | Semiconductor processing method using high pressure liquid media treatment | Electricity | 0 | Expired |
| US6417102B1 | Semiconductor processing method using high pressure liquid media treatment | Electricity | 0 | Expired |
| US7619672B2 | Retrograde well structure for a CMOS imager | Electricity | 0 | Active |
| US6995059B2 | Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions | Electricity | 0 | Expired |
| US6599800B2 | Methods of forming capacitors, and methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.