Metal oxynitride capacitor barrier layer
US6417537B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2000 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jan 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.