ESD protection network with field oxide device and bonding pad

US6417541B1 · kind B1 · utility

Assignee

• Chartered Semiconductor Manufacturing LTD · SG

Inventors

• Jun Cai · Allen, US
• Keng Foo Lo · Singapore, SG

Key dates

• Filing date: Jan 12, 2001
• Grant date: Jul 9, 2002
• Expiry date: Jan 12, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/815

Abstract

An electrostatic discharge protection structure is provided with a dielectric gate, source and drain contacts, and a semiconductor substrate. The semiconductor substrate is of a first conductivity type having the dielectric gate disposed partially on its surface. The source and drain contacts are connected to source and drain diffusion regions of a second conductivity type separated by the dielectric gate. Deep source and drain wells of the second conductivity type respectively disposed under the source and drain diffusion regions define a channel region of the first conductivity type. The channel region is doped so that the surface breakdown voltage is exceeded before the subsurface depletion region punch-through voltage is exceeded between the deep source and drain wells upon an electrostatic discharge at the drain contact.