Keng Foo Lo
14Patents
8h-index
11Co-inventors
61Inventor score
Filing activity: Mar 6, 2000 → Dec 1, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7205612B2 | Fully silicided NMOS device for electrostatic discharge protection | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6936895B2 | ESD protection device | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6458632B1 | UMOS-like gate-controlled thyristor structure for ESD protection | Electricity | 14 | Expired |
| US6310380A | Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers | Electricity | 12 | Expired |
| US6417541B1 | ESD protection network with field oxide device and bonding pad | Electricity | 9 | Expired |
| US7064358B2 | Triggered back-to-back diodes for ESD protection in triple-well CMOS process | Electricity | 9 | Expired |
| US7135743B2 | Electrostatic discharge protection device with complementary dual drain implant | Electricity | 8 | Expired |
| US6555878B2 | Umos-like gate-controlled thyristor structure for ESD protection | Electricity | 8 | Expired |
| US6265251A | Method to fabricate a thick oxide MOS transistor for electrostatic discharge protection in an STI process | Electricity | 7 | Expired |
| US6998685B2 | Electrostatic discharge protection device with complementary dual drain implant | Electricity | 6 | Expired |
| US6830966B2 | Fully silicided NMOS device for electrostatic discharge protection | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6835985B2 | ESD protection structure | Electricity | 4 | Expired |
| US6855609B2 | Method of manufacturing ESD protection structure | Electricity | 0 | Expired |
| US9165920B2 | Tunable protection system for integrated circuits | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.