STI (Shallow Trench Isolation) structures for minimizing leakage current through drain and source silicides
US6420770B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2001 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Jun 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
STI (Shallow Trench Isolation) structures are fabricated such that leakage current is minimized through a field effect transistor fabricated between the STI structures. The shallow trench isolation structure include a pair of isolation trenches, with each isolation trench being etched through a semiconductor substrate. A first dielectric material fills the pair of isolation trenches and extends from the isolation trenches such that sidewalls of the first dielectric material filling the isolation trenches are exposed beyond the top of the semiconductor substrate. A second dielectric material is deposited on the sidewalls of the first dielectric material exposed beyond the top of the semiconductor substrate. The second dielectric material has a different etch rate in an acidic solution from the first dielectric material filling the isolation trenches. The present invention may be used to particular advantage when the first dielectric material filling up the isolation trenches is comprised of silicon dioxide, and when the second dielectric material deposited on the sidewalls of the first dielectric material is comprised of silicon nitride. With the protective silicon nitride covering …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.