Light-emitting semiconductor device using gallium nitride compound semiconductor
US6423984B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1999 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Sep 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A barrier layer made of AlxGa1−xN (0<x≦0.18) is formed in a light-emitting semiconductor device using gallium nitride compound having a multi quantum-well (MQW) structure. By controlling a composition ratio x of aluminum (Al) or thickness of the barrier layer, luminous intensity of the device is improved.An n-cladding layer made of AlxGa1−xN (0<x≦0.06) is formed in a light-emitting semiconductor device using gallium nitride compound. By controlling a composition ratio x of aluminum or thickness of the n-cladding layer, luminous intensity of the device is improved.A p-type layer and an n-type layer are formed in a light-emitting semiconductor device using gallium nitride compound having a double-hetero junction structure. By controlling a ratio of a hole concentration of the p-type layer and an electron concentration of the n-type layer approximates to 1, luminous intensity of the device is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.