LDMOS power device with oversized dwell

US6424005B1 · kind B1 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Chin-Yu Tsai · Plano, US
• Taylor R. Efland · Richardson, US
• Sameer Pendharkar · Allen, US
• John P. Erdeljac · Plano, US
• Jozef Mitros · Richardson, US
• Jeffrey P. Smith · San Diego, US
• Louis N. Hutter · Richardson, US

Key dates

• Filing date: Dec 3, 1998
• Grant date: Jul 23, 2002
• Expiry date: Dec 3, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

An LDMOS device (10, 20, 50, 60) that is made with minimal feature size fabrication methods, but overcomes potential problems of misaligned Dwells (13). The Dwell (13) is slightly overstated so that its n-type dopant is implanted past the source edge of the gate region (18), which permits the n-type region of the Dwell to diffuse under the gate region (18) an sufficient distance to eliminate misalignment effects.