Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

US6426265B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jack O. Chu · Manhasset Hills, US
• Douglas D. Coolbaugh · Highland, US
• James S. Dunn · Jericho, US
• David R. Greenberg · White Plains, US
• David L. Harame · South Burlington, US
• Basanth Jagannathan · Beacon, US
• Robb Johnson · Thousand Oaks, US
• Louis D. Lanzerotti · Burlington, US
• Kathryn T. Schonenberg · Wappingers Falls, US
• Ryan Wuthrich · Burlington, US

Key dates

• Filing date: Jan 30, 2001
• Grant date: Jul 30, 2002
• Expiry date: Jan 30, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/832
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.