System and method of defect optimization for chemical mechanical planarization of polysilicon
US6431959B1 · kind B1 · utility
31Cited by
77References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Dec 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method of reducing defects in chemical mechanical planarization of polysilicon is disclosed. The system includes first and second polishing stations each having a different hardness polishing pad and a different slurry. A cleaning station using a dilute SC1 chemistry is also included. The process includes polishing a polysilicon wafer on a first polishing station using a hard polishing pad and then polishing the polysilicon wafer on a second polishing station having a soft pad. The polysilicon wafer may then be directly placed in a scrubber using a dilute SC1 chemistry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.