Dielectric etch process reducing striations and maintaining critical dimensions
US6432318B1 · kind B1 · utility
13Cited by
13References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 17, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Feb 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C4F6 or C5F8, an oxygen-containing gas such as O2, CO or CO2, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.