Method of improving electromigration resistance of capped Cu
US6432822B1 · kind B1 · utility
16Cited by
19References
11Claims
0Family size
Assignee
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Key dates
| Filing date | May 2, 2001 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | May 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The electromigration resistance of capped Cu or Cu alloy interconnects is significantly improved by treating the exposed planarized surface of the Cu or Cu alloy with a plasma containing NH3 and N2 under mild steady state conditions, thereby avoiding sensitizing the Cu or Cu alloy surface before capping layer deposition with an attendant improvement in electromigration resistance and wafer-to-wafer uniformity. Embodiments include treating the Cu or Cu alloy surface with a plasma at a relatively high N2 flow rate of about 8,000 to about 9,200 sccm and a relatively low NH3 flow rate of about 210 to about 310 sccm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.