Source drain implant during ONO formation for improved isolation of SONOS devices

US6436768B1 · kind B1 · utility

Assignees

• Advanced Micro Devices, Inc. · US
• FUJITSU LIMITED · JP

Inventors

• Jean Y. Yang · Sunnyvale, US
• Mark T. Ramsbey · Sunnyvale, US
• Emmanuil Lingunis · San Jose, US
• Yider Wu · Campbell, US
• Tazrien Kamal · Atlanta, US
• Yi He · San Diego, US
• Edward Hsia · Saratoga, US
• Hidehiko Shiraiwa · San Jose, US

Key dates

• Filing date: Jun 27, 2001
• Grant date: Aug 20, 2002
• Expiry date: Jun 27, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0413
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One aspect of the present invention relates to a method of forming a SONOS type non-volatile semiconductor memory device, involving forming a first layer of a charge trapping dielectric on a semiconductor substrate; forming a second layer of the charge trapping dielectric over the first layer of the charge trapping dielectric on the semiconductor substrate; optionally at least partially forming a third layer of the charge trapping dielectric over the second layer of the charge trapping dielectric on the semiconductor substrate; optionally removing the third layer of the charge trapping dielectric; forming a source/drain mask over the charge trapping dielectric; implanting a source/drain implant through the charge trapping dielectric into the semiconductor substrate; optionally removing the third layer of the charge trapping dielectric; and one of forming the third layer of the charge trapping dielectric over the second layer of the charge trapping dielectric on the semiconductor substrate, reforming the third layer of the charge trapping dielectric over the second layer of the charge trapping dielectric on the semiconductor substrate, or forming additional material over the third l…