Systems and methods for epitaxial processing of a semiconductor substrate
US6436796B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Jan 31, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thermal processing system and method for processing a semiconductor substrate. An inductor couples energy to a susceptor, wherein the spacing between the inductor and the susceptor is configured for the steady-state portions of a CVD epitaxial deposition process. The temperature uniformity of the susceptor is improved during the transient portions of the process, the heat ramp-up and cool down, by varying the distance of separation between the inductor and the susceptor. Temperature non-uniformities are a common cause of slip. Additional aspects of the invention provide for improved thermal shielding of the edges and top surface of the susceptor. Thicker susceptors also improve temperature uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.