Substrate cleaning process

US6440864B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Thomas J. Kropewnicki · Austin, US
• Jeremiah T. Pender · San Jose, US
• Henry Fong · Daly City, US
• Charles Peter Auglis · Plano, US
• Raymond Hung · Palo Alto, US
• Hongqing Shan · Cupertino, US

Key dates

• Filing date: Jun 30, 2000
• Grant date: Aug 27, 2002
• Expiry date: Jun 30, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K3/26
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A substrate cleaning method comprises exposing a substrate 30 to an energized process gas to remove residue 60 and resist material 50 from the substrate 30. In one version, the process gas comprises cleaning gas, such as an oxygen-containing gas, and an additive gas, such as NH3. In one version, the process gas is introduced to remove residue 60 and resist material 50 from the substrate and to remove residue from surfaces in the process chamber 75.