Method of chemical-vapor deposition of a material
US6444263B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Oct 10, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/0281
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for chemical-vapor deposition of a material film adds precursor decomposition by-product to the precursor flow to suppress premature gas-phase precursor decomposition and improve process repeatability and film quality. In one embodiment, CVD cobalt films are deposited with carbonyl precursors with reduced premature gas-phase reaction and particulate generation by the addition of excess carbon monoxide to the process chamber comprising the precursor flow. The addition of carbon monoxide not only suppresses gas-phase reaction but also improves cobalt film purity. The addition of excess carbon monoxide to CVD cobalt precursor flow provides repeatable deposition of glue and nucleation layers to support CVD copper, and is extendable to the deposition of high purity CVD cobalt for other applications and with other precursors, and also extendable for CVD CoSi2 films and other cobalt-containing applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.