Method of improving photoresist profile
US6444410B1 · kind B1 · utility
2Cited by
1References
13Claims
0Family size
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Key dates
| Filing date | Oct 14, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Oct 14, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of improving a photoresist profile. After a photoresist layer is developed, a hard bake is performed at a temperature lower than a glass transition temperature of the photoresist layer. The photoresist layer is thus able to reflow, so that the profile can be modified. Or alternatively, the hard bake step can be replace by first performing a hard bake at a temperature higher than the glass transition temperature, followed by performing a flow bake at a temperature lower than the glass transition temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.