UV-enhanced silylation process to increase etch resistance of ultra thin resists
US6451512B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | May 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.