Method for abrasive-free metal CMP in passivation domain
US6451697B1 · kind B1 · utility
21Cited by
39References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Apr 6, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Metal CMP with reduced dishing and overpolish insensitivity is achieved with an abrasive-free polishing composition having a pH and oxidation-reduction potential in the domain of passivation of the metal and, therefore, a low static etching rate at high temperatures, e.g., higher than 50° C. Embodiments of the present invention comprise CMP of Cu film without any abrasive using a composition comprising one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, one or more agents to achieve a pH of about 3 to about 10 and deionized water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.