Shijian Li
88Patents
20h-index
89Co-inventors
91Inventor score
Filing activity: Dec 13, 1995 → Sep 14, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6170428A | Symmetric tunable inductively coupled HDP-CVD reactor | Electricity | 322 | Expired |
| US6083344A | Multi-zone RF inductively coupled source configuration | Electricity | 287 | Expired |
| US6465051B1 | Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling | Electricity | 191 | Expired |
| US5761023A | Substrate support with pressure zones having reduced contact area and temperature feedback | Electricity | 122 | Expired |
| US6179709A | In-situ monitoring of linear substrate polishing operations | Electricity | 116 | Expired |
| US5772771A | Deposition chamber for improved deposition thickness uniformity | Electricity | 101 | Expired |
| US6070551A | Deposition chamber and method for depositing low dielectric constant films | Electricity | 76 | Expired |
| US6833052B2 | Deposition chamber and method for depositing low dielectric constant films | Electricity | 56 | Expired |
| US6077357A | Orientless wafer processing on an electrostatic chuck | Electricity | 52 | Expired |
| US6413873B1 | System for chemical mechanical planarization | Electricity | 50 | Expired |
| US6796880B2 | Linear polishing sheet with window | Electricity | 30 | Expired |
| US6416823B2 | Deposition chamber and method for depositing low dielectric constant films | Electricity | 30 | Expired |
| US6524167B1 | Method and composition for the selective removal of residual materials and barrier materials during substrate planarization | Chemistry; Metallurgy | 29 | Expired |
| US6585563B1 | In-situ monitoring of linear substrate polishing operations | Electricity | 29 | Expired |
| US6991517B2 | Linear polishing sheet with window | Electricity | 27 | Expired |
| US6261157A | Selective damascene chemical mechanical polishing | Electricity | 26 | Expired |
| US6322427A | Conditioning fixed abrasive articles | Performing Operations; Transporting | 25 | Expired |
| US6589610B2 | Deposition chamber and method for depositing low dielectric constant films | Electricity | 25 | Expired |
| US6451697B1 | Method for abrasive-free metal CMP in passivation domain | Chemistry; Metallurgy | 21 | Expired |
| US6623334B1 | Chemical mechanical polishing with friction-based control | Performing Operations; Transporting | 20 | Expired |
| US6541384B1 | Method of initiating cooper CMP process | Chemistry; Metallurgy | 20 | Expired |
| US6592742B2 | Electrochemically assisted chemical polish | Chemistry; Metallurgy | 20 | Expired |
| US7615480B2 | Methods of post-contact back end of the line through-hole via integration | Electricity | 20 | Active |
| US6669538B2 | Pad cleaning for a CMP system | Performing Operations; Transporting | 19 | Expired |
| US6592439B1 | Platen for retaining polishing material | Electricity | 18 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.