Drop-in test structure and methodology for characterizing an integrated circuit process flow and topography
US6452412B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1999 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Mar 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A drop-in test structure fabricated upon a production integrated circuit elevational profile and a method for using the drop-in test structure for characterizing an integrated circuit production methodology are described. The test structure may be fabricated upon an integrated circuit elevational profile formed according to a subset of steps within a sequence of steps of the integrated circuit production methodology that culminates in a production integrated circuit intended for use by a consumer. According to an embodiment, the integrated circuit elevational profile may be fabricated according to a majority of the sequence of steps. Alternatively, the integrated circuit elevational profile may be fabricated according to a minority of the sequence of steps. The test structure may be fabricated upon die sites designated to receive the test structure. Alternatively, the test structure may be fabricated upon die sites otherwise intended for operable integrated circuits. In an embodiment, test structures may be fabricated upon only selected die sites. Alternatively, test structures may be fabricated across the entire wafer to characterize spatial variation in process parameters. The te…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.