Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
US6455421B1 · kind B1 · utility
8Cited by
6References
29Claims
0Family size
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Key dates
| Filing date | Jul 31, 2000 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Jul 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming tantalum nitride (TaN) compound layers for use in integrated circuit fabrication processes is disclosed. The tantalum nitride (TaN) compound layer is formed by thermally decomposing a tantalum containing metal organic precursor. After the tantalum nitride (TaN) compound layer is formed, it is plasma treated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.