Michael Yang
47Patents
25h-index
84Co-inventors
84Inventor score
Filing activity: May 19, 1999 → Feb 14, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6423949B1 | Multi-zone resistive heater | Electricity | 450 | Expired |
| US6797340B2 | Method for depositing refractory metal layers employing sequential deposition techniques | Chemistry; Metallurgy | 145 | Expired |
| US6660126B2 | Lid assembly for a processing system to facilitate sequential deposition techniques | Electricity | 111 | Expired |
| US6846516B2 | Multiple precursor cyclical deposition system | Chemistry; Metallurgy | 110 | Expired |
| US6827978B2 | Deposition of tungsten films | Electricity | 96 | Expired |
| US6998014B2 | Apparatus and method for plasma assisted deposition | Electricity | 93 | Expired |
| US6939804B2 | Formation of composite tungsten films | Electricity | 90 | Expired |
| US6809026B2 | Selective deposition of a barrier layer on a metal film | Electricity | 89 | Expired |
| US6734020B2 | Valve control system for atomic layer deposition chamber | Emerging Cross-Sectional Technologies | 89 | Expired |
| US6951804B2 | Formation of a tantalum-nitride layer | Electricity | 87 | Expired |
| US7405158B2 | Methods for depositing tungsten layers employing atomic layer deposition techniques | Electricity | 87 | Expired |
| US7026238B2 | Reliability barrier integration for Cu application | Electricity | 78 | Expired |
| US6720027B2 | Cyclical deposition of a variable content titanium silicon nitride layer | Emerging Cross-Sectional Technologies | 65 | Expired |
| US6911391B2 | Integration of titanium and titanium nitride layers | Electricity | 59 | Expired |
| US6939801B2 | Selective deposition of a barrier layer on a dielectric material | Electricity | 54 | Expired |
| US7094680B2 | Formation of a tantalum-nitride layer | Electricity | 48 | Expired |
| US7279432B2 | System and method for forming an integrated barrier layer | Electricity | 41 | Expired |
| US7745333B2 | Methods for depositing tungsten layers employing atomic layer deposition techniques | Electricity | 38 | Active |
| US6645884B1 | Method of forming a silicon nitride layer on a substrate | Chemistry; Metallurgy | 36 | Expired |
| US7605083B2 | Formation of composite tungsten films | Electricity | 32 | Active |
| US7223323B2 | Multi-chemistry plating system | Electricity | 31 | Expired |
| US7670465B2 | Anolyte for copper plating | Electricity | 30 | Active |
| US7396565B2 | Multiple precursor cyclical deposition system | Chemistry; Metallurgy | 29 | Expired |
| US7094685B2 | Integration of titanium and titanium nitride layers | Electricity | 29 | Expired |
| US7514353B2 | Contact metallization scheme using a barrier layer over a silicide layer | Electricity | 25 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.